Catalog
MOSFET, Power, 20V, N-Channel, WDFN6
Key Features
• Ultra Low RDS(on)
• Small Footprint of 4mm²
• Pb−Free, Halogen−Free/BFR−Free
Description
AI
MOSFET, Power, Single 30V/±12V N-Channel, 4.9mΩ @ 4.5V, 17.8A, WDFN6 2x2x0.8mm
Beta
⌘K
MOSFET, Power, 20V, N-Channel, WDFN6
MOSFET, Power, 20V, N-Channel, WDFN6
| Part | Package / Case | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 6-PowerWDFN | Surface Mount | 12.1 A | 860 mW | 21 nC | 3.8 mOhm | -55 °C | 150 °C | MOSFET (Metal Oxide) | 1.2 V | 20 V | N-Channel | 2165 pF | 12 V | 1.8 V 4.5 V | 6-PQFN (2x2) | |
ON Semiconductor | 6-PowerWDFN | Surface Mount | 10.3 A | 860 mW | 4.9 mOhm | -55 °C | 150 °C | MOSFET (Metal Oxide) | 1.1 V | 30 V | N-Channel | 1565 pF | 12 V | 1.8 V 4.5 V | 6-PQFN (2x2) | 14.7 nC |