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STFI13N60M2
Discrete Semiconductor Products

STFI13N60M2

Obsolete
STMicroelectronics

MOSFET N-CH 600V 11A I2PAKFP

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DocumentsDatasheet
STFI13N60M2
Discrete Semiconductor Products

STFI13N60M2

Obsolete
STMicroelectronics

MOSFET N-CH 600V 11A I2PAKFP

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSTFI13N60M2
Current - Continuous Drain (Id) @ 25°C11 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC
Input Capacitance (Ciss) (Max) @ Vds580 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-262-3 Full Pack, I2PAK
Power Dissipation (Max)25 W
Rds On (Max) @ Id, Vgs380 mOhm
Supplier Device PackageTO-281 (I2PAKFP)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 454$ 3.78
Tube 1$ 3.35
50$ 2.66
100$ 2.28

Description

General part information

STFI13N Series

N-Channel 600 V 11A (Tc) 25W (Tc) Through Hole TO-281 (I2PAKFP)

Documents

Technical documentation and resources