Discrete Semiconductor Products
EMZ8T2R
ActiveRohm Semiconductor
PNP LOW VCE(SAT) TRANSISTOR + NPN GENERAL PURPOSE AMPLIFICATION TRANSISTOR
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Discrete Semiconductor Products
EMZ8T2R
ActiveRohm Semiconductor
PNP LOW VCE(SAT) TRANSISTOR + NPN GENERAL PURPOSE AMPLIFICATION TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | EMZ8T2R |
|---|---|
| Current - Collector (Ic) (Max) | 150 mA, 500 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120, 270 |
| Frequency - Transition | 260 MHz, 180 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-666, SOT-563 |
| Supplier Device Package | EMT6 |
| Transistor Type | 1 NPN, 1 PNP |
| Vce Saturation (Max) @ Ib, Ic | 250 mV, 400 mV |
| Voltage - Collector Emitter Breakdown (Max) | 12 V, 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 8000 | $ 0.14 | |
| 16000 | $ 0.12 | |||
| 24000 | $ 0.12 | |||
| 40000 | $ 0.11 | |||
| 56000 | $ 0.11 | |||
Description
General part information
EMZ8T2 Series
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Documents
Technical documentation and resources