
Discrete Semiconductor Products
JANTX2N3767
ActiveMicrochip Technology
TRANS GP BJT NPN 80V 4A 25000MW 3-PIN(2+TAB) TO-66
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Discrete Semiconductor Products
JANTX2N3767
ActiveMicrochip Technology
TRANS GP BJT NPN 80V 4A 25000MW 3-PIN(2+TAB) TO-66
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTX2N3767 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 4 A |
| Current - Collector Cutoff (Max) [Max] | 500 çA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 °C |
| Operating Temperature [Min] | -65 ░C |
| Package / Case | TO-66-2, TO-213AA |
| Power - Max [Max] | 25 W |
| Qualification | MIL-PRF-19500/518 |
| Supplier Device Package | TO-66 (TO-213AA) |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Arrow | N/A | 1 | $ 25.76 | |
| Digikey | Bulk | 100 | $ 25.81 | |
| Microchip Direct | N/A | 1 | $ 27.79 | |
Description
General part information
JANTX2N3767-Transistor Series
This specification covers the performance requirements for NPN silicon, power, 2N3766 and 2N3767 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/518. The device package outline is a TO-213AA.
Documents
Technical documentation and resources