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Microchip Technology-2N6295 Darlington BJT Trans Darlington NPN 80V 4A 50000mW 3-Pin(2+Tab) TO-66
Discrete Semiconductor Products

JANTX2N3767

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Microchip Technology

TRANS GP BJT NPN 80V 4A 25000MW 3-PIN(2+TAB) TO-66

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Microchip Technology-2N6295 Darlington BJT Trans Darlington NPN 80V 4A 50000mW 3-Pin(2+Tab) TO-66
Discrete Semiconductor Products

JANTX2N3767

Active
Microchip Technology

TRANS GP BJT NPN 80V 4A 25000MW 3-PIN(2+TAB) TO-66

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N3767
Current - Collector (Ic) (Max) [Max]4 A
Current - Collector Cutoff (Max) [Max]500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature [Max]200 °C
Operating Temperature [Min]-65 ░C
Package / CaseTO-66-2, TO-213AA
Power - Max [Max]25 W
QualificationMIL-PRF-19500/518
Supplier Device PackageTO-66 (TO-213AA)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 25.76
DigikeyBulk 100$ 25.81
Microchip DirectN/A 1$ 27.79

Description

General part information

JANTX2N3767-Transistor Series

This specification covers the performance requirements for NPN silicon, power, 2N3766 and 2N3767 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/518. The device package outline is a TO-213AA.

Documents

Technical documentation and resources