MASTERGAN4
ActiveHIGH POWER DENSITY 600V HALF-BRIDGE DRIVER WITH TWO ENHANCEMENT MODE GAN HEMTS
MASTERGAN4
ActiveHIGH POWER DENSITY 600V HALF-BRIDGE DRIVER WITH TWO ENHANCEMENT MODE GAN HEMTS
Technical Specifications
Parameters and characteristics for this part
| Specification | MASTERGAN4 |
|---|---|
| Applications | General Purpose |
| Current - Output / Channel | 6.5 A |
| Current - Peak Output | 6.5 A |
| Fault Protection | Over Temperature, UVLO |
| Features | Bootstrap Circuit |
| Interface | Logic |
| Load Type | Capacitive and Resistive |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | 31-VQFN Exposed Pad |
| Rds On (Typ) | 225 mOhm, 225 mOhm |
| Supplier Device Package | 31-QFN (9x9) |
| Voltage - Load [Max] | 15 V |
| Voltage - Load [Min] | 3.3 V |
| Voltage - Supply [Max] | 15 V |
| Voltage - Supply [Min] | 3.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
MASTERGAN4 Series
The MASTERGAN4 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration. The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON)of 225 mΩ, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
The MASTERGAN4 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.
The extended range of the input pins allows easy interfacing with microcontrollers, DSP units or Hall effect sensors.
