Discrete Semiconductor Products
FDMS8050ET30
NRNDON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 423A, 0.65MΩ
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Discrete Semiconductor Products
FDMS8050ET30
NRNDON Semiconductor
N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 423A, 0.65MΩ
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDMS8050ET30 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 423 A, 55 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 285 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 22610 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 3.3 W, 180 W |
| Rds On (Max) @ Id, Vgs | 0.65 mOhm |
| Supplier Device Package | 8-PQFN (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.68 | |
| 10 | $ 2.45 | |||
| 100 | $ 1.93 | |||
| Digi-Reel® | 1 | $ 3.68 | ||
| 10 | $ 2.45 | |||
| 100 | $ 1.93 | |||
| Tape & Reel (TR) | 3000 | $ 1.93 | ||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 2.32 | |
| 6000 | $ 2.17 | |||
| 12000 | $ 2.01 | |||
| 18000 | $ 1.94 | |||
| 30000 | $ 1.90 | |||
| ON Semiconductor | N/A | 1 | $ 1.78 | |
Description
General part information
FDMS8050ET30 Series
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on).
Documents
Technical documentation and resources