Discrete Semiconductor Products
BSM300D12P4G101
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 291 A, 1.2 KV, MODULE
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Discrete Semiconductor Products
BSM300D12P4G101
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 291 A, 1.2 KV, MODULE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSM300D12P4G101 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 291 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 30000 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature | 175 °C |
| Package / Case | Module |
| Power - Max [Max] | 925 W |
| Supplier Device Package | Module |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSM300D12P4G101 Series
BSM300D12P4G101 is a half bridge module consisting of SiC-UMOSFET, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
Documents
Technical documentation and resources