BSM300D12P4G101 Series

1200V, 291A, Half bridge, Full SiC-Power Module with Trench MOSFET

Catalog

1200V, 291A, Half bridge, Full SiC-Power Module with Trench MOSFET

Part	Operating Temperature	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Technology	Configuration	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Power - Max [Max]
Rohm Semiconductor BSM300D12P4G101	175 °C	Module	Chassis Mount	4.8 V	Silicon Carbide (SiC)	2 N-Channel (Dual)	Module	291 A	30000 pF	1.2 kV	1200 V	925 W

Catalog

1200V, 291A, Half bridge, Full SiC-Power Module with Trench MOSFET

Description

BSM300D12P4G101 is a half bridge module consisting of SiC-UMOSFET, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.