Discrete Semiconductor Products

SIHA186N60EF-GE3

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MOSFET N-CH 600V 8.4A TO220

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Discrete Semiconductor Products

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MOSFET N-CH 600V 8.4A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	SIHA186N60EF-GE3

Current - Continuous Drain (Id) @ 25°C	8.4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	1081 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs	193 mOhm
Supplier Device Package	TO-220 Full Pack
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SIHA186N60EF-GE3	32 nC	30 V	600 V	-55 °C	150 °C	193 mOhm	N-Channel	156 W	TO-220 Full Pack	Through Hole	1081 pF	8.4 A	TO-220-3 Full Pack	MOSFET (Metal Oxide)	10 V	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 8.4A (Tc) 156W (Tc) Through Hole TO-220 Full Pack

Technical documentation and resources