SIHA186 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 600V 8.4A TO220
| Part | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | FET Type | Power Dissipation (Max) | Supplier Device Package | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Package / Case | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 32 nC | 30 V | 600 V | -55 °C | 150 °C | 193 mOhm | N-Channel | 156 W | TO-220 Full Pack | Through Hole | 1081 pF | 8.4 A | TO-220-3 Full Pack | MOSFET (Metal Oxide) | 10 V | 5 V |