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SOT669
Discrete Semiconductor Products

PHPT61010PYX

Active
Nexperia USA Inc.

100 V, 10 A PNP HIGH POWER BIPOLAR TRANSISTOR

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SOT669
Discrete Semiconductor Products

PHPT61010PYX

Active
Nexperia USA Inc.

100 V, 10 A PNP HIGH POWER BIPOLAR TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPHPT61010PYX
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]180
Frequency - Transition90 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseSC-100, SOT-669
Power - Max [Max]1.5 W
QualificationAEC-Q100
Supplier Device PackagePower-SO8, LFPAK56
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic800 mV
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.77
10$ 0.67
100$ 0.46
500$ 0.39
Digi-Reel® 1$ 0.77
10$ 0.67
100$ 0.46
500$ 0.39
N/A 1927$ 1.51
Tape & Reel (TR) 1500$ 0.33
3000$ 0.29
7500$ 0.28
10500$ 0.26

Description

General part information

PHPT61010 Series

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.