
Catalog
100 V, 10 A PNP high power bipolar transistor
Description
AI
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

100 V, 10 A PNP high power bipolar transistor
100 V, 10 A PNP high power bipolar transistor
| Part | Grade | Vce Saturation (Max) @ Ib, Ic | Operating Temperature | Supplier Device Package | Qualification | Mounting Type | Package / Case | Power - Max [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Frequency - Transition | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Transistor Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Automotive | 800 mV | 175 °C | LFPAK56 Power-SO8 | AEC-Q100 | Surface Mount | SC-100 SOT-669 | 1.5 W | 180 | 90 MHz | 100 V | 100 nA | PNP |
Nexperia USA Inc. | Automotive | 370 mV | 175 °C | LFPAK56 Power-SO8 | AEC-Q100 | Surface Mount | SC-100 SOT-669 | 1.5 W | 150 | 145 MHz | 100 V | 100 nA | NPN |