STW56N65M2-4
ActiveTRANS MOSFET N-CH 650V 49A 4-PIN(4+TAB) TO-247 TUBE
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STW56N65M2-4
ActiveTRANS MOSFET N-CH 650V 49A 4-PIN(4+TAB) TO-247 TUBE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STW56N65M2-4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 49 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3900 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 358 W |
| Rds On (Max) @ Id, Vgs | 62 mOhm |
| Supplier Device Package | TO-247-4 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
STW56 Series
N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package
| Part | Mounting Type | Vgs(th) (Max) @ Id | Vgs (Max) | Operating Temperature | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Power Dissipation (Max) | Technology | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | Through Hole | 4 V | 25 V | 150 °C | TO-247-4 | 52 A | 91 nC | N-Channel | 600 V | 55 mOhm | 3750 pF | 10 V | TO-247-4 | 350 W | MOSFET (Metal Oxide) | ||
STMicroelectronics | Through Hole | 4 V | 25 V | 150 °C | TO-247-4 | 49 A | 93 nC | N-Channel | 650 V | 62 mOhm | 3900 pF | 10 V | TO-247-4 | 358 W | MOSFET (Metal Oxide) | ||
 STMicroelectronics | Through Hole | 5 V | 25 V | TO-247-3 | 50 A | 90 nC | N-Channel | 600 V | 60 mOhm | 4100 pF | 10 V | TO-247-3 | 360 W | MOSFET (Metal Oxide) | 150 °C | -55 °C |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 5.17 | |
| Tube | 600 | $ 6.54 | ||
Description
General part information
STW56 Series
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources