Specification	FDT86256

Current - Continuous Drain (Id) @ 25°C	3 A, 1.2 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2 nC
Input Capacitance (Ciss) (Max) @ Vds	73 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	10 W, 2.3 W
Rds On (Max) @ Id, Vgs	845 mOhm
Supplier Device Package	SOT-223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDT86246L Series

N-Channel PowerTrench® MOSFET 150V, 1.2A, 845mΩ

Part	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Mounting Type
ON Semiconductor FDT86246L	20 V	SOT-223-4	6.3 nC	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	2 A	4.5 V 10 V	TO-261-4 TO-261AA	150 V	2.5 V	335 pF	228 mOhm	1 W	Surface Mount
ON Semiconductor FDT86256	20 V	SOT-223-4	2 nC	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	1.2 A 3 A	6 V 10 V	TO-261-4 TO-261AA	150 V	4 V	73 pF	845 mOhm	2.3 W 10 W	Surface Mount
ON Semiconductor FDT86246	20 V	SOT-223-4	4 nC	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	2 A	6 V 10 V	TO-261-4 TO-261AA	150 V	4 V	215 pF	236 mOhm	2.2 W	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.96
		10	$ 1.25
		100	$ 0.84
		500	$ 0.67
		1000	$ 0.61
	Digi-Reel®	1	$ 1.96
		10	$ 1.25
		100	$ 0.84
		500	$ 0.67
		1000	$ 0.61
Newark	Each (Supplied on Full Reel)	4000	$ 0.69

Description

General part information

FDT86246L Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.