JAN2N697S
ActiveNPN SILICON SWITCHING MEDIUM-POWER 40V, 0.15A
Deep-Dive with AI
Search across all available documentation for this part.
JAN2N697S
ActiveNPN SILICON SWITCHING MEDIUM-POWER 40V, 0.15A
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | JAN2N697S |
|---|---|
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Power - Max [Max] | 600 mW |
| Qualification | MIL-PRF-19500/99 |
| Supplier Device Package | TO-39 (TO-205AD) |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 194.16 | |
Description
General part information
JAN2N697S-Transistor Series
This specification covers the performance requirements for NPN, silicon, switching, medium power, 2N696 and 2N697 transistors. One level of product assurance (JAN) is provided for all encapsulated devices as specified in MIL-PRF-19500/99. The device package outlines are as follows: TO-205AA (formerly modified TO-5 without suffix S) or a TO-205AD (formerly modified TO-39 with suffix S) for all encapsulated device types.
Documents
Technical documentation and resources