Zenode.ai Logo
Beta
D2PAK-7
Discrete Semiconductor Products

NTBG015N065SC1

Active
ON Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 145 A, 650 V, 0.012 OHM, TO-263 (D2PAK)

Deep-Dive with AI

Search across all available documentation for this part.

D2PAK-7
Discrete Semiconductor Products

NTBG015N065SC1

Active
ON Semiconductor

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 145 A, 650 V, 0.012 OHM, TO-263 (D2PAK)

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNTBG015N065SC1
Current - Continuous Drain (Id) @ 25°C145 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)18 V, 15 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs283 nC
Input Capacitance (Ciss) (Max) @ Vds4689 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)500 W
Rds On (Max) @ Id, Vgs18 mOhm
Supplier Device PackageD2PAK-7
Vgs(th) (Max) @ Id4.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 27.20
10$ 24.17
100$ 21.14
Digi-Reel® 1$ 27.20
10$ 24.17
100$ 21.14
Tape & Reel (TR) 800$ 18.04
NewarkEach 100$ 19.83
ON SemiconductorN/A 1$ 16.04

Description

General part information

NTBG015N065SC1 Series

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.