NTBG015N065SC1 Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Package / Case	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NTBG015N065SC1	650 V	145 A	4689 pF	Surface Mount	283 nC	18 mOhm	D2PAK-7	-55 °C	175 ░C	500 W	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	4.3 V	N-Channel	15 V 18 V

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L

Key Features

• Low RDSon

• High Junction Temperature

• 100% UIL Tested

• RoHS Compliant

• High Speed Switching and Low Capacitance

• 650V rated

• Max RDS(on) = 18.4 mΩ at Vgs = 18V, Id = 60A

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.