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PDIP / 8
Integrated Circuits (ICs)

TC1411EPA

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Microchip Technology

IC GATE DRVR LOW-SIDE 8DIP

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PDIP / 8
Integrated Circuits (ICs)

TC1411EPA

Active
Microchip Technology

IC GATE DRVR LOW-SIDE 8DIP

Technical Specifications

Parameters and characteristics for this part

SpecificationTC1411EPA
Channel TypeSingle
Current - Peak Output (Source, Sink) [custom]1 A
Current - Peak Output (Source, Sink) [custom]1 A
Driven ConfigurationLow-Side
Gate TypeN-Channel, P-Channel MOSFET
Input TypeInverting
Logic Voltage - VIL, VIH0.8 V, 2 V
Mounting TypeThrough Hole
Number of Drivers1
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / Case0.3 in
Package / Case8-DIP
Package / Case7.62 mm
Rise / Fall Time (Typ) [custom]25 ns
Rise / Fall Time (Typ) [custom]25 ns
Supplier Device Package8-PDIP
Voltage - Supply [Max]16 V
Voltage - Supply [Min]4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 420$ 1.36
Microchip DirectTUBE 1$ 1.80
25$ 1.49
100$ 1.36
1000$ 1.13
5000$ 1.02
10000$ 0.97

Description

General part information

TC1411N Series

The TC1411/1411N are 1 A CMOS buffer/gate drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5 V of noise spiking of either polarity occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of current of either polarity being forced back into their output. All terminals are fully protected against up to 4 kV of electrostatic discharge. As MOSFET drivers, the TC1411/1411N can easily switch 1,000 pF gate capacitance in 25 ns with matched rise and fall times, and provide low enough impedance in both the ON and the OFF states to ensure the MOSFET’s intended state will not be affected, even by large transients. The rise and fall time edges are matched to allow driving short-duration inputs with greater accuracy.