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Discrete Semiconductor Products
NTCR013N120M3S
ActiveON Semiconductor
SILICON CARBIDE (SIC) MOSFET – ELITESIC, 13 MOHM, 1200 V, M3S, DIE
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Discrete Semiconductor Products
NTCR013N120M3S
ActiveON Semiconductor
SILICON CARBIDE (SIC) MOSFET – ELITESIC, 13 MOHM, 1200 V, M3S, DIE
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | NTCR013N120M3S |
|---|---|
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 254 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5813 pF |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Rds On (Max) @ Id, Vgs [Max] | 20 mOhm |
| Supplier Device Package | Die |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Vgs(th) (Max) @ Id | 4.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tray | 1 | $ 32.43 | |
| 10 | $ 24.33 | |||
| 25 | $ 22.26 | |||
| 80 | $ 20.26 | |||
| 230 | $ 19.15 | |||
| ON Semiconductor | N/A | 1 | $ 20.43 | |
Description
General part information
NTCR013N120M3S Series
The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Documents
Technical documentation and resources