NTCR013N120M3S Series

Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, Die

Catalog

Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, Die

Part	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Package / Case
ON Semiconductor NTCR013N120M3S	5813 pF	18 V	SiC (Silicon Carbide Junction Transistor)	20 mOhm	254 nC	4.4 V	Surface Mount	Die	N-Channel	1200 V	Die

Catalog

Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, Die

Key Features

• Excellent FOM [ = Rdson * Eoss ]

• Ultra Low Gate Charge (QG(tot) = 254 nC)

• High Speed Switching with Low Capacitance (Coss = 262 pF)

• 15V to 18V Gate Drive

• New M3S technology: 13 mohm RDS(ON) with low Eon and Eoff losses

• 100% Avalanche Tested

• Halide Free and RoHS Compliant

• Die ( sawn on foil )

Description

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.