Specification	FDZ371PZ

Current - Continuous Drain (Id) @ 25°C	3.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	1000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	WLCSP, 4-XFBGA
Power Dissipation (Max)	1.7 W
Rds On (Max) @ Id, Vgs [Max]	75 mOhm
Supplier Device Package	4-WLCSP (1x1)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

FDZ371PZ Series

P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20V, -3.7A, 75mΩ

Part	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDZ371PZ	MOSFET (Metal Oxide)	1 V	3.7 A	75 mOhm	4-XFBGA WLCSP	17 nC	1.5 V 4.5 V	20 V	4-WLCSP (1x1)	P-Channel	Surface Mount	1.7 W	8 V	-55 °C	150 °C	1000 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDZ371PZ Series

Designed on an advanced 1.5 V PowerTrench®process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ371PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).