FDZ371PZ Series

P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20V, -3.7A, 75mΩ

Catalog

P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20V, -3.7A, 75mΩ

Part	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDZ371PZ	MOSFET (Metal Oxide)	1 V	3.7 A	75 mOhm	4-XFBGA WLCSP	17 nC	1.5 V 4.5 V	20 V	4-WLCSP (1x1)	P-Channel	Surface Mount	1.7 W	8 V	-55 °C	150 °C	1000 pF

Catalog

P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20V, -3.7A, 75mΩ

Key Features

• Max rDS(on)= 75 mΩ at VGS= -4.5 V, ID= -2.0 A

• Max rDS(on)= 90 mΩ at VGS= -2.5 V, ID= -1.5 A

• Max rDS(on)= 110 mΩ at VGS= -1.8 V, ID= -1.0 A

• Max rDS(on)= 150 mΩ at VGS= -1.5 V, ID= -1.0 A

• Occupies only 1.0 mm2of PCB area. Less than 30% of the area of 2 x 2 BGA

• Ultra-thin package: less than 0.4 mm height when mounted to PCB

• HBM ESD protection level > 4.4 kV (Note 3)

• RoHS Compliant

Description

Designed on an advanced 1.5 V PowerTrench®process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ371PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).