Discrete Semiconductor Products
STGB19NC60KDT4
ActiveSTMicroelectronics
IGBTS 20 A - 600 V - SHORT CIRCUIT RUGGED IGBT
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Discrete Semiconductor Products
STGB19NC60KDT4
ActiveSTMicroelectronics
IGBTS 20 A - 600 V - SHORT CIRCUIT RUGGED IGBT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STGB19NC60KDT4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 35 A |
| Current - Collector Pulsed (Icm) | 75 A |
| Gate Charge | 55 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Reverse Recovery Time (trr) | 31 ns |
| Supplier Device Package | D2PAK |
| Switching Energy | 165 µJ, 255 µJ |
| Td (on/off) @ 25°C [custom] | 105 ns |
| Td (on/off) @ 25°C [custom] | 30 ns |
| Test Condition | 15 V, 12 A, 10 Ohm, 480 V |
| Vce(on) (Max) @ Vge, Ic [Max] | 2.75 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGB19NC60KDT4 Series
These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.