Discrete Semiconductor Products

SI4103DY-T1-GE3

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MOSFET P-CH 30V 14A/16A 8SO

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Discrete Semiconductor Products

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MOSFET P-CH 30V 14A/16A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4103DY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	14 A, 16 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	140 nC
Input Capacitance (Ciss) (Max) @ Vds	5200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W, 5.2 W
Rds On (Max) @ Id, Vgs	7.9 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Package / Case [y]	Package / Case [x]	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI4103DY-T1-GE3	140 nC	20 V	4.5 V 10 V	8-SOIC	3.9 mm	0.154 in	2.5 W 5.2 W	8-SO	5200 pF	MOSFET (Metal Oxide)	14 A 16 A	Surface Mount	P-Channel	2 V	30 V	-55 °C	150 °C	7.9 mOhm

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General part information

P-Channel 30 V 14A (Ta), 16A (Tc) 2.5W (Ta), 5.2W (Tc) Surface Mount 8-SO

Technical documentation and resources