SI4103 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 30V 14A/16A 8SO
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Package / Case [y] | Package / Case [x] | Power Dissipation (Max) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Technology | Current - Continuous Drain (Id) @ 25°C | Mounting Type | FET Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 140 nC | 20 V | 4.5 V 10 V | 8-SOIC | 3.9 mm | 0.154 in | 2.5 W 5.2 W | 8-SO | 5200 pF | MOSFET (Metal Oxide) | 14 A 16 A | Surface Mount | P-Channel | 2 V | 30 V | -55 °C | 150 °C | 7.9 mOhm |