Discrete Semiconductor Products

FQB4N90TM

Obsolete

MOSFET N-CH 900V 4.2A D2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 900V 4.2A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	FQB4N90TM

Current - Continuous Drain (Id) @ 25°C	4.2 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	1100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	140 W
Power Dissipation (Max)	3.13 W
Rds On (Max) @ Id, Vgs [Max]	3.3 Ohm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FQB4N90TM	1100 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	30 V	900 V	140 W	3.13 W	4.2 A	3.3 Ohm	TO-263 (D2PAK)	5 V	-55 °C	150 °C	30 nC	N-Channel	MOSFET (Metal Oxide)	Surface Mount
ON Semiconductor FQB4P25TM		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	30 V	250 V		3.13 W 75 W	4 A		TO-263 (D2PAK)	5 V	-55 °C	150 °C	14 nC	P-Channel	MOSFET (Metal Oxide)	Surface Mount	420 pF	2.1 Ohm
ON Semiconductor FQB4N50TM	460 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	30 V	500 V		3.13 W 70 W	3.4 A	2.7 Ohm	TO-263 (D2PAK)	5 V	-55 °C	150 °C		N-Channel	MOSFET (Metal Oxide)	Surface Mount			13 nC
ON Semiconductor FQB4P40TM	680 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	30 V	400 V		3.13 W 85 W	3.5 A		TO-263 (D2PAK)	5 V	-55 °C	150 °C	23 nC	P-Channel	MOSFET (Metal Oxide)	Surface Mount		3.1 Ohm
ON Semiconductor FQB46N15TM_AM002	3250 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	25 V	150 V		3.75 W 210 W		42 mOhm	TO-263 (D2PAK)	4 V	-55 °C	175 ░C		N-Channel	MOSFET (Metal Oxide)	Surface Mount			110 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 900 V 4.2A (Tc) 3.13W (Ta), 140W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources