FQB4 Series

Catalog

MOSFET N-CH 900V 4.2A D2PAK

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FQB4N90TM	1100 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	30 V	900 V	140 W	3.13 W	4.2 A	3.3 Ohm	TO-263 (D2PAK)	5 V	-55 °C	150 °C	30 nC	N-Channel	MOSFET (Metal Oxide)	Surface Mount
ON Semiconductor FQB4P25TM		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	30 V	250 V		3.13 W 75 W	4 A		TO-263 (D2PAK)	5 V	-55 °C	150 °C	14 nC	P-Channel	MOSFET (Metal Oxide)	Surface Mount	420 pF	2.1 Ohm
ON Semiconductor FQB4N50TM	460 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	30 V	500 V		3.13 W 70 W	3.4 A	2.7 Ohm	TO-263 (D2PAK)	5 V	-55 °C	150 °C		N-Channel	MOSFET (Metal Oxide)	Surface Mount			13 nC
ON Semiconductor FQB4P40TM	680 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	30 V	400 V		3.13 W 85 W	3.5 A		TO-263 (D2PAK)	5 V	-55 °C	150 °C	23 nC	P-Channel	MOSFET (Metal Oxide)	Surface Mount		3.1 Ohm
ON Semiconductor FQB46N15TM_AM002	3250 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	25 V	150 V		3.75 W 210 W		42 mOhm	TO-263 (D2PAK)	4 V	-55 °C	175 ░C		N-Channel	MOSFET (Metal Oxide)	Surface Mount			110 nC