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ONSEMI NGTB45N60SWG
Discrete Semiconductor Products

STW15NK90Z

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STMicroelectronics

N-CHANNEL 900 V, 0.40 OHM TYP., 15 A SUPERMESH POWER MOSFET IN A TO-247 PACKAGE

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ONSEMI NGTB45N60SWG
Discrete Semiconductor Products

STW15NK90Z

Active
STMicroelectronics

N-CHANNEL 900 V, 0.40 OHM TYP., 15 A SUPERMESH POWER MOSFET IN A TO-247 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW15NK90Z
Current - Continuous Drain (Id) @ 25°C15 A
Drain to Source Voltage (Vdss)900 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs256 nC
Input Capacitance (Ciss) (Max) @ Vds6100 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)350 W
Rds On (Max) @ Id, Vgs550 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 389$ 9.42

Description

General part information

STW15NK90Z Series

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.