Discrete Semiconductor Products

PHB110NQ08T,118

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N-CHANNEL TRENCHMOS STANDARD LEVEL FET

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DocumentsDatasheet plastic, single-ended surface-mounted package (D2PAK); 3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body +19

Discrete Semiconductor Products

PHB110NQ08T,118

Active

Nexperia USA Inc.

N-CHANNEL TRENCHMOS STANDARD LEVEL FET

Deep-Dive with AI

DocumentsDatasheet plastic, single-ended surface-mounted package (D2PAK); 3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body +19

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PHB110NQ08T,118

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	113.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4860 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	230 W
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

PHB110NQ08T Series

N-channel TrenchMOS standard level FET

Part	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package
Nexperia USA Inc. PHB110NQ08T,118	175 °C	-55 °C	20 V	MOSFET (Metal Oxide)	N-Channel	4860 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	75 A	113.1 nC	75 V	230 W	10 V	Surface Mount	D2PAK

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.65
	Digi-Reel®	1	$ 2.65
	N/A	0	$ 0.00
		750	$ 2.55
	Tape & Reel (TR)	4800	$ 1.11

Description

General part information

PHB110NQ08T Series

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.