PHB110NQ08T Series

N-channel TrenchMOS standard level FET

Catalog

N-channel TrenchMOS standard level FET

Part	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package
Nexperia USA Inc. PHB110NQ08T,118	175 °C	-55 °C	20 V	MOSFET (Metal Oxide)	N-Channel	4860 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	75 A	113.1 nC	75 V	230 W	10 V	Surface Mount	D2PAK

Catalog

N-channel TrenchMOS standard level FET

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.