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Technical Specifications
Parameters and characteristics for this part
| Specification | FJNS3201RTA |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 20 |
| Frequency - Transition | 250 MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Short Body |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4700 Ohms |
| Supplier Device Package | TO-92S |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 11539 | $ 0.03 | |
Description
General part information
FJNS32 Series
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole TO-92S
Documents
Technical documentation and resources
No documents available