Discrete Semiconductor Products

FJNS3202RTA

Obsolete

TRANS PREBIAS NPN 50V TO92S

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Discrete Semiconductor Products

Obsolete

TRANS PREBIAS NPN 50V TO92S

Technical Specifications

Parameters and characteristics for this part

Specification	FJNS3202RTA

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 hFE
Frequency - Transition	250 MHz
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 Short Body
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	TO-92S
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Supplier Device Package	Transistor Type	Resistor - Base (R1)	Current - Collector (Ic) (Max) [Max]	Package / Case	Frequency - Transition	Mounting Type	Resistor - Emitter Base (R2)	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor FJNS3202RTA	TO-92S	NPN - Pre-Biased	10 kOhms	100 mA	TO-226-3 TO-92-3 Short Body	250 MHz	Through Hole	10 kOhms	50 V	30 hFE	100 nA	300 mV
ON Semiconductor FJNS3201RTA	TO-92S	NPN - Pre-Biased	4.7 kOhms	100 mA	TO-226-3 TO-92-3 Short Body	250 MHz	Through Hole	4700 Ohms	50 V		100 nA	300 mV	20

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole TO-92S

Technical documentation and resources