Specification	FDP2D9N12C

Current - Continuous Drain (Id) @ 25°C	18 A, 210 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	109 nC
Input Capacitance (Ciss) (Max) @ Vds	8894 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs [Max]	2.9 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDP2D9N12C Series

MOSFET - N-Channel, Shielded Gate PowerTrench 120 V, 2.95 mΩ, 181 A

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Vgs (Max)
ON Semiconductor FDP2D9N12C	TO-220	-55 °C	175 ░C	Through Hole	4 V	120 V	6 V 10 V	8894 pF	MOSFET (Metal Oxide)	109 nC	N-Channel	18 A 210 A	2.9 mOhm	TO-220-3	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

MOSFET - N-Channel, Shielded Gate PowerTrench 120 V, 2.95 mΩ, 181 A

Technical documentation and resources