FDP2D9N12C Series

MOSFET - N-Channel, Shielded Gate PowerTrench 120 V, 2.95 mΩ, 181 A

Catalog

MOSFET - N-Channel, Shielded Gate PowerTrench 120 V, 2.95 mΩ, 181 A

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Vgs (Max)
ON Semiconductor FDP2D9N12C	TO-220	-55 °C	175 ░C	Through Hole	4 V	120 V	6 V 10 V	8894 pF	MOSFET (Metal Oxide)	109 nC	N-Channel	18 A 210 A	2.9 mOhm	TO-220-3	20 V

MOSFET - N-Channel, Shielded Gate PowerTrench 120 V, 2.95 mΩ, 181 A

• Shielded Gate MOSFET Technology

• Max RDS(on) = 2.95 mΩ at VGS = 10 V, ID = 181 A

• 50% Lower Qrr than Other MOSFET Suppliers

• Lowers Switching Noise/EMI

• 100% UIL Tested

• These Devices are Pb−Free, Halogen−Free and are RoHS Compliant

MOSFET - N-Channel, Shielded Gate PowerTrench 120 V, 2.95 mΩ, 181 A