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STGW20V60F
Discrete Semiconductor Products

STGW20V60F

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STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, V SERIES 600 V, 20 A VERY HIGH SPEED

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DocumentsTN1378+9
STGW20V60F
Discrete Semiconductor Products

STGW20V60F

Active
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, V SERIES 600 V, 20 A VERY HIGH SPEED

Deep-Dive with AI

DocumentsTN1378+9

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGW20V60F
Current - Collector (Ic) (Max) [Max]40 A
Current - Collector Pulsed (Icm)80 A
Gate Charge116 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]167 W
Supplier Device PackageTO-247
Switching Energy200 µJ, 130 µJ
Td (on/off) @ 25°C [Max]149 ns
Td (on/off) @ 25°C [Min]38 ns
Test Condition400 V, 20 A, 15 V
Vce(on) (Max) @ Vge, Ic [Max]2.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 56$ 4.78

Description

General part information

STGW20V60F Series

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.