Discrete Semiconductor Products

IXFH110N10P

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Littelfuse/Commercial Vehicle Products

DISCMOSFETN-CH HIPERFET-POLAR TO-247AD/ TUBE

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Discrete Semiconductor Products

IXFH110N10P

Active

Littelfuse/Commercial Vehicle Products

DISCMOSFETN-CH HIPERFET-POLAR TO-247AD/ TUBE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH110N10P

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3550 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	480 W
Rds On (Max) @ Id, Vgs [Max]	15 mOhm
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

IXFH110N25T Series

DiscMosfetN-CH HiPerFET-Polar TO-247AD

Part	Supplier Device Package	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)
Littelfuse/Commercial Vehicle Products IXFH110N25T	TO-247AD (IXFH)	20 V	-55 °C	150 °C	N-Channel	TO-247-3	9400 pF	157 nC	MOSFET (Metal Oxide)	250 V	4.5 V	110 A	24 mOhm	694 W	Through Hole	10 V
Littelfuse/Commercial Vehicle Products IXFH110N10P	TO-247AD (IXFH)	20 V	-55 °C	175 ░C	N-Channel	TO-247-3		110 nC	MOSFET (Metal Oxide)	100 V	5 V	110 A			Through Hole	10 V	15 mOhm	3550 pF	480 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 3.99
Newark	Each	250	$ 6.16
		500	$ 5.73
		1000	$ 5.38

Description

General part information

IXFH110N25T Series

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density

Documents

Technical documentation and resources