IXFH110N25T Series

DiscMosfetN-CH HiPerFET-Polar TO-247AD

Manufacturer: Littelfuse/Commercial Vehicle Products

Catalog

DiscMosfetN-CH HiPerFET-Polar TO-247AD

Part	Supplier Device Package	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)
Littelfuse/Commercial Vehicle Products IXFH110N25T	TO-247AD (IXFH)	20 V	-55 °C	150 °C	N-Channel	TO-247-3	9400 pF	157 nC	MOSFET (Metal Oxide)	250 V	4.5 V	110 A	24 mOhm	694 W	Through Hole	10 V
Littelfuse/Commercial Vehicle Products IXFH110N10P	TO-247AD (IXFH)	20 V	-55 °C	175 ░C	N-Channel	TO-247-3		110 nC	MOSFET (Metal Oxide)	100 V	5 V	110 A			Through Hole	10 V	15 mOhm	3550 pF	480 W

Catalog

DiscMosfetN-CH HiPerFET-Polar TO-247AD

Key Features

• International Standard Packages

• Dynamic dv/dt Rating

• Avalanche Rated

• Fast Intrinsic Rectifier

• Low QGand RDS(on)

• Low Drain-to-Tab Capacitance

• Low Package Inductance

Description

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density