Discrete Semiconductor Products

SI7370DP-T1-E3

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MOSFET N-CH 60V 9.6A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 60V 9.6A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7370DP-T1-E3

Current - Continuous Drain (Id) @ 25°C	9.6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	1.9 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SI7370DP-T1-GE3	PowerPAK® SO-8	4 V	11 mOhm	20 V	-55 °C	150 °C	10 V	57 nC	PowerPAK® SO-8	9.6 A	N-Channel	Surface Mount	60 V	MOSFET (Metal Oxide)	1.9 W
Vishay General Semiconductor - Diodes Division SI7370DP-T1-E3	PowerPAK® SO-8	4 V	11 mOhm	20 V	-55 °C	150 °C	6 V 10 V	57 nC	PowerPAK® SO-8	9.6 A	N-Channel	Surface Mount	60 V	MOSFET (Metal Oxide)	1.9 W

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General part information

N-Channel 60 V 9.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources