SI7370 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 9.6A PPAK SO-8
| Part | Supplier Device Package | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Current - Continuous Drain (Id) @ 25°C | FET Type | Mounting Type | Drain to Source Voltage (Vdss) | Technology | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | PowerPAK® SO-8 | 4 V | 11 mOhm | 20 V | -55 °C | 150 °C | 10 V | 57 nC | PowerPAK® SO-8 | 9.6 A | N-Channel | Surface Mount | 60 V | MOSFET (Metal Oxide) | 1.9 W |
Vishay General Semiconductor - Diodes Division | PowerPAK® SO-8 | 4 V | 11 mOhm | 20 V | -55 °C | 150 °C | 6 V 10 V | 57 nC | PowerPAK® SO-8 | 9.6 A | N-Channel | Surface Mount | 60 V | MOSFET (Metal Oxide) | 1.9 W |