Discrete Semiconductor Products

SISS40DN-T1-GE3

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MOSFET N-CH 100V 36.5A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 100V 36.5A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISS40DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	36.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	845 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8S
Power Dissipation (Max)	3.7 W, 52 W
Rds On (Max) @ Id, Vgs	21 mOhm
Supplier Device Package	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs (Max)	FET Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type
Vishay General Semiconductor - Diodes Division SISS40DN-T1-GE3	100 V	36.5 A	6 V 10 V	PowerPAK® 1212-8S	MOSFET (Metal Oxide)	24 nC	PowerPAK® 1212-8S	20 V	N-Channel	3.7 W 52 W	-55 °C	150 °C	21 mOhm	845 pF	3.5 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 36.5A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8S

Technical documentation and resources