SISS40 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 100V 36.5A PPAK
| Part | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Vgs (Max) | FET Type | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 100 V | 36.5 A | 6 V 10 V | PowerPAK® 1212-8S | MOSFET (Metal Oxide) | 24 nC | PowerPAK® 1212-8S | 20 V | N-Channel | 3.7 W 52 W | -55 °C | 150 °C | 21 mOhm | 845 pF | 3.5 V | Surface Mount |