RF and Wireless

HMC1040LP3CE

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Analog Devices

RF AMPLIFIER, 24GHZ TO 43.5GHZ, 25 DB GAIN, QFN-EP-16, -40 °C TO 85 °C

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RF and Wireless

HMC1040LP3CE

Active

Analog Devices

RF AMPLIFIER, 24GHZ TO 43.5GHZ, 25 DB GAIN, QFN-EP-16, -40 °C TO 85 °C

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	HMC1040LP3CE

Current - Supply	70 mA
Gain	25 dB
Mounting Type	Surface Mount
Noise Figure	2.7 dB
P1dB	12 dBm
Package / Case	16-VFQFN Exposed Pad
RF Type	VSAT
Supplier Device Package	16-QFN (3x3)
Test Frequency [Max]	27 GHz
Test Frequency [Min]	24 GHz
Voltage - Supply	2.5 V

HMC1040LP3CE Series

20 GHz to 44 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier

Part	Noise Figure	Supplier Device Package	Voltage - Supply	Current - Supply	Test Frequency [Max]	Test Frequency [Min]	P1dB	Package / Case	Gain	RF Type	Mounting Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Frequency [Min]	Frequency [Max]
Analog Devices HMC1040LP3CE	2.7 dB	16-QFN (3x3)	2.5 V	70 mA	27 GHz	24 GHz	12 dBm	16-VFQFN Exposed Pad	25 dB	VSAT	Surface Mount
Analog Devices HMC1040LP3CETR	2.7 dB	16-QFN (3x3)	2.5 V	70 mA	27 GHz	24 GHz	12 dBm	16-VFQFN Exposed Pad	25 dB	VSAT	Surface Mount
Analog Devices HMC1040CHIPS	2.5 dB	Die		65 mA	44 GHz	40 GHz	14 dBm	Die	21 dB	General Purpose	Surface Mount	2.3 V	3.5 V	20 GHz	44 GHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Strip	1	$ 80.75
		10	$ 65.12
		25	$ 60.60
		100	$ 55.17
Newark	Each	1	$ 75.14
		5	$ 69.16
		10	$ 63.17
		25	$ 59.46
		50	$ 58.20
		100	$ 56.29

Description

General part information

HMC1040LP3CE Series

The HMC1040CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise wideband amplifier that operates from 20 GHz to 44 GHz. The HMC1040CHIPS is self biased and provides a typical gain of 25.0 dB, a 2 dB typical noise figure, and a typical output third-order intercept (IP3) of 25.5 dBm typical, requiring only 65 mA from a 2.5 V supply voltage. The typical saturated output power (PSAT) of 15.5 dBm enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in phase quadrature (I/Q) or image rejection mixers.The HMC1040CHIPS also feature inputs and outputs that are internally matched to 50 Ω, making it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.ApplicationsSoftware defined radiosElectronic warfareRadar applicationsSatellite communicationElectronic warfareInstrumentationTelecommunications

Documents

Technical documentation and resources