
Discrete Semiconductor Products
2N2880
ActiveMicrochip Technology
TRANS GP BJT NPN 80V 5A 2000MW 3-PIN TO-59 TRAY
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Search across all available documentation for this part.
DocumentsProduct Change Notice EN

Discrete Semiconductor Products
2N2880
ActiveMicrochip Technology
TRANS GP BJT NPN 80V 5A 2000MW 3-PIN TO-59 TRAY
Deep-Dive with AI
DocumentsProduct Change Notice EN
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N2880 |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Cutoff (Max) [Max] | 20 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Mounting Type | Stud Mount |
| Package / Case | TO-210AA, Stud, TO-59-4 |
| Power - Max [Max] | 2 W |
| Supplier Device Package | TO-59 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic [Max] | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
2N2880 Series
Bipolar (BJT) Transistor NPN 80 V 5 A 2 W Stud Mount TO-59
Documents
Technical documentation and resources