Discrete Semiconductor Products

MSJPF20N65A-BP

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N-CHANNEL MOSFET,TO-220F

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Discrete Semiconductor Products

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N-CHANNEL MOSFET,TO-220F

Technical Specifications

Parameters and characteristics for this part

Specification	MSJPF20N65A-BP

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1807 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	34 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
Micro Commercial Components MSJPF20N65-BP	380 mOhm	TO-220F	901 pF	650 V	20 A	MOSFET (Metal Oxide)	N-Channel	10 V	4 V	30 V	-55 °C	150 °C	Through Hole	TO-220-3 Full Pack	31.3 W	21 nC
Micro Commercial Components MSJPF20N65A-BP	180 mOhm	TO-220F	1807 pF	650 V	20 A	MOSFET (Metal Oxide)	N-Channel	10 V	4 V	30 V	-55 °C	150 °C	Through Hole	TO-220-3 Full Pack	34 W		56 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 20A 34W Through Hole TO-220F

Technical documentation and resources