NILMS4501NR2

Obsolete

ON Semiconductor

POWER MOSFET WITH CURRENT MIRROR FET 24 V, 9.5 A, N-CHANNEL, ESD PROTECTED, 1:250 CURRENT MIRROR

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Discrete Semiconductor Products

NILMS4501NR2

Obsolete

ON Semiconductor

POWER MOSFET WITH CURRENT MIRROR FET 24 V, 9.5 A, N-CHANNEL, ESD PROTECTED, 1:250 CURRENT MIRROR

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NILMS4501NR2

Current - Continuous Drain (Id) @ 25°C	9.5 A
Drain to Source Voltage (Vdss)	24 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Feature	Current Sensing
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	1500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	4-DFN
Power Dissipation (Max)	1.4 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	4-PLLP (6.2x5.2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

NILMS4501N Series

Power MOSFET with Current Mirror FET 24 V, 9.5 A, N-Channel, ESD Protected, 1:250 Current Mirror

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Feature	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NILMS4501NR2	MOSFET (Metal Oxide)	10 V	-55 °C	175 ░C	25 nC	4-PLLP (6.2x5.2)	1500 pF	13 mOhm	Current Sensing	N-Channel	24 V	Surface Mount	4-DFN	2 V	10 V	1.4 W	9.5 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NILMS4501N Series

N-Channel MOSFET with 1:250 current mirror device utilizing the latest ON Semiconductor technology to achieve low figure of merit while keeping a high accuracy in the linear region. This device takes advantage of the latest leadless QFN package to improve thermal transfer.

Documents

Technical documentation and resources