NILMS4501N Series

Power MOSFET with Current Mirror FET 24 V, 9.5 A, N-Channel, ESD Protected, 1:250 Current Mirror

Catalog

Power MOSFET with Current Mirror FET 24 V, 9.5 A, N-Channel, ESD Protected, 1:250 Current Mirror

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Feature	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NILMS4501NR2	MOSFET (Metal Oxide)	10 V	-55 °C	175 ░C	25 nC	4-PLLP (6.2x5.2)	1500 pF	13 mOhm	Current Sensing	N-Channel	24 V	Surface Mount	4-DFN	2 V	10 V	1.4 W	9.5 A

Catalog

Power MOSFET with Current Mirror FET 24 V, 9.5 A, N-Channel, ESD Protected, 1:250 Current Mirror

Key Features

• Current Sense MOSFET

• ±3.5% Current Mirror Accuracy in Linear Region

• ±15% Current Mirror Accuracy in Low Current Saturation Region

• ESD Protected on the Main and the Mirror MOSFET

• Low Gate Charge

• Pb-Free Package is Available

Description

N-Channel MOSFET with 1:250 current mirror device utilizing the latest ON Semiconductor technology to achieve low figure of merit while keeping a high accuracy in the linear region. This device takes advantage of the latest leadless QFN package to improve thermal transfer.