Discrete Semiconductor Products

1N5360AE3/TR13

LTB

ZENER DIODE, 25V V(Z), 10%, 5W, SILICON, UNIDIRECTIONAL, DO-201AE

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Discrete Semiconductor Products

LTB

ZENER DIODE, 25V V(Z), 10%, 5W, SILICON, UNIDIRECTIONAL, DO-201AE

Technical Specifications

Parameters and characteristics for this part

Part	Supplier Device Package	Power - Max [Max]	Impedance (Max) (Zzt) [Max]	Voltage - Forward (Vf) (Max) @ If	Voltage - Zener (Nom) (Vz)	Package / Case	Tolerance	Current - Reverse Leakage @ Vr	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
Microchip Technology 1N5360C/TR12	T-18	5 W	4 Ohms	1.2 V	25 V	T-18 Axial	2 %	500 nA	Through Hole	-65 ░C	150 °C
Microchip Technology 1N5360AE3/TR12	T-18	5 W	4 Ohms	1.2 V	25 V	T-18 Axial	10 %	500 nA	Through Hole	-65 ░C	150 °C
Microchip Technology 1N5360BE3/TR8	T-18	5 W	4 Ohms	1.2 V	25 V	T-18 Axial	5 %	500 nA	Through Hole	-65 ░C	150 °C
Microchip Technology 1N5360BE3/TR13	T-18	5 W	4 Ohms	1.2 V	25 V	T-18 Axial	5 %	500 nA	Through Hole	-65 ░C	150 °C
Microchip Technology 1N5360CE3/TR8	T-18	5 W	4 Ohms	1.2 V	25 V	T-18 Axial	2 %	500 nA	Through Hole	-65 ░C	150 °C
Microchip Technology 1N5360B/TR12	T-18	5 W	4 Ohms	1.2 V	25 V	T-18 Axial	5 %	500 nA	Through Hole	-65 ░C	150 °C
Microchip Technology 1N5360AE3/TR13	T-18	5 W	4 Ohms	1.2 V	25 V	T-18 Axial	10 %	500 nA	Through Hole	-65 ░C	150 °C
Microchip Technology 1N5360/TR12	T-18	5 W	4 Ohms	1.2 V	25 V	T-18 Axial	20 %	500 nA	Through Hole	-65 ░C	150 °C
Microchip Technology 1N5360E3/TR12	T-18	5 W	4 Ohms	1.2 V	25 V	T-18 Axial	20 %	500 nA	Through Hole	-65 ░C	150 °C
Microchip Technology 1N5360AE3/TR8	T-18	5 W	4 Ohms	1.2 V	25 V	T-18 Axial	10 %	500 nA	Through Hole	-65 ░C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	1250	$ 0.86

General part information

Zener Diode 25 V 5 W ±10% Through Hole T-18

Technical documentation and resources