Discrete Semiconductor Products
FDMC012N03
ActiveON Semiconductor
N-CHANNEL POWER TRENCH<SUP>®</SUP> MOSFET 30 V, 1.23 MΩ
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Discrete Semiconductor Products
FDMC012N03
ActiveON Semiconductor
N-CHANNEL POWER TRENCH<SUP>®</SUP> MOSFET 30 V, 1.23 MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMC012N03 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 185 A, 35 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 110 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 8183 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerWDFN |
| Power Dissipation (Max) | 64 W, 2.3 W |
| Rds On (Max) @ Id, Vgs | 1.23 mOhm |
| Supplier Device Package | Power33 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.83 | |
| 10 | $ 2.51 | |||
| 100 | $ 1.76 | |||
| 500 | $ 1.44 | |||
| 1000 | $ 1.34 | |||
| Digi-Reel® | 1 | $ 3.83 | ||
| 10 | $ 2.51 | |||
| 100 | $ 1.76 | |||
| 500 | $ 1.44 | |||
| 1000 | $ 1.34 | |||
| Tape & Reel (TR) | 3000 | $ 1.32 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 3.43 | |
| 10 | $ 2.45 | |||
| 25 | $ 2.24 | |||
| 50 | $ 2.03 | |||
| 100 | $ 1.82 | |||
| 250 | $ 1.66 | |||
| 500 | $ 1.52 | |||
| 1000 | $ 1.39 | |||
| ON Semiconductor | N/A | 1 | $ 0.48 | |
Description
General part information
FDMC012N03 Series
This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Documents
Technical documentation and resources