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TO-252AA
Discrete Semiconductor Products

FQD7N20TM_F080

Obsolete
ON Semiconductor

MOSFET N-CH 200V 5.3A DPAK

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TO-252AA
Discrete Semiconductor Products

FQD7N20TM_F080

Obsolete
ON Semiconductor

MOSFET N-CH 200V 5.3A DPAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFQD7N20TM_F080
Current - Continuous Drain (Id) @ 25°C5.3 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]10 nC
Input Capacitance (Ciss) (Max) @ Vds400 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)2.5 W, 45 W
Rds On (Max) @ Id, Vgs690 mOhm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

FQD7 Series

N-Channel 200 V 5.3A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount TO-252AA

Documents

Technical documentation and resources