FQD7 Series

Catalog

MOSFET N-CH 200V 5.5A DPAK

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FQD7N20LTF	2 V	750 mOhm	2.5 W 45 W	MOSFET (Metal Oxide)	9 nC	200 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	10 V	5 V	20 V	500 pF	-55 °C	150 °C	5.5 A	TO-252AA
ON Semiconductor FQD7P06TF	4 V	451 mOhm	2.5 W 28 W	MOSFET (Metal Oxide)	8.2 nC	60 V	P-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount			25 V	295 pF	-55 °C	150 °C	5.4 A	TO-252AA	10 V
ON Semiconductor FQD7N20TM_F080	5 V	690 mOhm	2.5 W 45 W	MOSFET (Metal Oxide)		200 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount			30 V	400 pF	-55 °C	150 °C	5.3 A	TO-252AA	10 V	10 nC
ON Semiconductor FQD7N10TM	4 V	350 mOhm	2.5 W 25 W	MOSFET (Metal Oxide)	7.5 nC	100 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount			25 V	250 pF	-55 °C	150 °C	5.8 A	TO-252AA	10 V
ON Semiconductor FQD7P20TM_F080	5 V	690 mOhm	2.5 W 55 W	MOSFET (Metal Oxide)		200 V	P-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount			30 V	770 pF	-55 °C	150 °C	5.7 A	TO-252AA	10 V	25 nC
ON Semiconductor FQD7N20TM	5 V	690 mOhm	2.5 W 45 W	MOSFET (Metal Oxide)		200 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount			30 V	400 pF	-55 °C	150 °C	5.3 A	TO-252AA	10 V	10 nC
ON Semiconductor FQD7N10LTF	2 V	350 mOhm	2.5 W 25 W	MOSFET (Metal Oxide)	6 nC	100 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	10 V	5 V	20 V	290 pF	-55 °C	150 °C	5.8 A	TO-252AA